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S6992
TOSHIBA Thyristor Silicon Planar Type
S6992
Condenser Discharge Control Applications
* * * * Critical rate of rise of ON-state current: di/dt = 750 A/s Repetitive surge ON-state current: ITRM = 500 A (tw = 2 s) Repetitive peak OFF-state voltage: VDRM = 800 V Gate trigger current: IGT = 20 mA max.
Maximum Ratings
Characteristics Repetitive peak OFF-state voltage Repetitive peak surge ON-state current (Note) Critical rate of rise of ON-state current (Note) Peak gate power dissipation Average gate power dissipation Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Junction temperature Storage temperature range PGM PG (AV) VFGM VRGM IGM Tj Tstg 5 0.5 10 -5 2 -40~125 -40~150 W W V V A C C Symbol VDRM ITRM di/dt Rating 800 500 Unit V A
750
A/s
Note: VD < 0.8 x rated, Tc = 85C, igp > 40 mA, tgw > 10 s, tgr < 150 ns = = = =
Marking
1 2
1
TYPE NAME Lot Number
S6992
MARK Example 8A: January 1998 8B: February 1998 8L: December 1998
S6992
2
Month (starting from alphabet A) Year last decimal digit of the current year
*: There is no reverse-blocking (reverse voltage) ability.
961001EAA1
* TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
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S6992
Electrical Characteristics (Ta = 25C)
Characteristics Repetitive peak OFF-state current Peak ON-state voltage Gate trigger voltage Gate trigger current Gate non-trigger voltage Critical rate of rise of OFF-state voltage Holding current Thermal resistance Symbol IDRM VTM VGT IGT VGD dv/dt IH Rth (j-a) Test Condition VDRM = rated ITM = 25 A VD = 6 V, RL = 10 VD = rated, Tc = 125C VDRM = rated, Tc = 125C Exponential rise VD = 6 V, ITM = 1 A Junction to ambient Min 0.2 Typ. 50 Max 10 1.5 1.0 20 40 70 Unit A V V mA V V/s mA C/W
Test Circuit Examples R L S6992 VD C tw LC , IP - - VD L/C
0.5 IP
IP
t tw = 2 s di/dt = 0.5 IP t
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S6992
IGT (Tc)/IGT (Tc = 25C) - Tc
2.5
(typical)
2.0 VD = 6 V RL = 10
VGT (Tc)/VGT (Tc = 25C) - Tc
(typical)
VD = 6 V RL = 10
2.0
VGT (Tc)/VGT (Tc = 25C)
IGT (Tc)/IGT (Tc = 25C)
1.5
1.5
1.0
1.0
0.5
0.5
0.0 -60
-20
20
60
100
140
0.0 -60
-20
20
60
100
140
Case temperature Tc
(C)
Case temperature Tc
(C)
IH (Tc)/IH (Tc = 25C) - Tc
2.0
(typical)
5 VD = 6 V ITM = 1 A
Pulse trigger characteristics
VD = 6 V RL = 10 Tc = 25C
(typical)
Resistance load
4
1.5
IH (Tc)/IH (Tc = 25C)
Rectangular waveform
iGT(tw)/IGT
3 tw 2
iGT
1.0
0.5 1
0.0 -60
-20
20
60
100
140
0 0.1
1
10
100
1000
Case temperature Tc
(C)
Gate trigger pulse width tw
(s)
iT - vT
1000
Instantaneous ON-state current iT
(A)
100 10 Tj = 125C 25C
1 0.0
1.0
2.0
3.0
4.0
Instantaneous ON-state voltage vT
(V)
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